{"id":8602,"date":"2016-09-14T13:58:00","date_gmt":"2016-09-14T11:58:00","guid":{"rendered":"https:\/\/www.institut-foton.eu\/?p=8602"},"modified":"2025-04-22T12:31:44","modified_gmt":"2025-04-22T10:31:44","slug":"mimic-sel-vcsel-antimoniure-metamorphique-a-cascade-quantique-interbande-pour-le-moyen-infrarouge","status":"publish","type":"post","link":"https:\/\/www.institut-foton.eu\/en\/mimic-sel-vcsel-antimoniure-metamorphique-a-cascade-quantique-interbande-pour-le-moyen-infrarouge\/","title":{"rendered":"MIMIC-SEL: VCSEL antimoniure m\u00e9tamorphique \u00e0 cascade quantique interbande pour le moyen infrarouge"},"content":{"rendered":"\n<div class=\"wp-block-group is-nowrap is-layout-flex wp-container-core-group-is-layout-6c531013 wp-block-group-is-layout-flex\">\n<div class=\"wp-block-group is-vertical is-layout-flex wp-container-core-group-is-layout-fe9cc265 wp-block-group-is-layout-flex\">\n<p>septembre 2016 \u2013 aout 2020<\/p>\n\n\n\n<p>Projet ANR-16-CE24-0011 (ANR)<\/p>\n<\/div>\n\n\n\n<hr class=\"wp-block-separator has-alpha-channel-opacity\"\/>\n\n\n\n<figure class=\"wp-block-image size-large is-resized\"><img loading=\"lazy\" decoding=\"async\" width=\"1024\" height=\"390\" src=\"https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-2-1024x390.jpg\" alt=\"\" class=\"wp-image-2440\" style=\"width:197px;height:75px\" srcset=\"https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-2-1024x390.jpg 1024w, https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-2-300x114.jpg 300w, https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-2-768x292.jpg 768w, https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-2.jpg 1211w\" sizes=\"auto, (max-width: 1024px) 100vw, 1024px\" \/><\/figure>\n<\/div>\n\n\n\n<p><strong>L&#8217;objectif principal du projet MIMIC-SEL est la r\u00e9alisation du premier Laser \u00e0 Cavit\u00e9 Verticale \u00e9mettant par la surface (VCSEL) \u00e0 pompage \u00e9lectrique \u00e9mettant au del\u00e0 de 3 \u00b5m en r\u00e9gime d&#8217;alimentation continue et au dessus de 300K.<\/strong><\/p>\n\n\n\n\n\n\n\n<h2 class=\"wp-block-heading\">Contexte<\/h2>\n\n\n\n<p>La disponibilit\u00e9 de VCSELs pomp\u00e9s \u00e9lectriquement \u00e0 une longue d&#8217;onde sup\u00e9rieure \u00e0 3 \u00b5m op\u00e9rant en r\u00e9gime d&#8217;alimentation continu au del\u00e0 de la temp\u00e9rature ambiante est consid\u00e9r\u00e9 comme une technologie de rupture pour les applications de d\u00e9tection optique \u00e0 base de laser semi-conducteur. En effet, la g\u00e9om\u00e9trie de ces composants offrent des propri\u00e9t\u00e9s uniques tel qu&#8217;une \u00e9mission mono-fr\u00e9quence avec une large accordabilit\u00e9 sans saut de mode, une faible consommation \u00e9lectrique et un co\u00fbt r\u00e9duit. Ces dispositifs sont donc des sources id\u00e9ales pour d\u00e9velopper des r\u00e9seaux de d\u00e9tecteur photonique, ce qui aidera au contr\u00f4le de la pollution de notre environnement, \u00e0 d\u00e9tecter des fuites de produits dangereux et pr\u00e9venir des risques d&#8217;incendies permis les exemples possible d&#8217;applications.<br>La r\u00e9alisation de VCSELs pomp\u00e9s \u00e9lectriquement \u00e9mettant dans le moyen infrarouge n\u00e9cessite d&#8217;utiliser des mat\u00e9riaux \u00e0 base d&#8217;antimoniures. Cependant, r\u00e9aliser de tel composant dans la gamme spectrale 3-5 \u00b5m n\u00e9cessite de nouvelles approches pour \u00e0 la fois la zone active et les proc\u00e9d\u00e9 technologiques. Ainsi, la structure sera compos\u00e9e d&#8217;une zone active avec des puits quantiques interbandes de type-II mis en cascade, une couche m\u00e9tamorphique \u00e0 base d&#8217;ars\u00e9niure oxyd\u00e9 pour constituer le confinement \u00e9lectro-optique et d&#8217;un miroir de Bragg di\u00e9lectrique pour le la partie sup\u00e9rieure du VCSEL. Cette technologie permettra de r\u00e9aliser des VCSELs avec des performances compatibles pour la detection de mol\u00e9cules par spectroscopie optique.<br>Le point de d\u00e9part de ce projet est la compl\u00e9mentarit\u00e9 des comp\u00e9tences entre les diff\u00e9rents partenaires de MIMIC-SEL. en effet, l&#8217;IES est reconnu sur la croissance par \u00e9pitaxie par jets mol\u00e9culaires et l&#8217;\u00e9tude des VCSELs \u00e0 base d&#8217;antimoniure, le LAAS a une expertise sur la technologie des VCSELs \u00e0 base d&#8217;ars\u00e9niures et plus pr\u00e9cis\u00e9ment sur le contr\u00f4le du confinement lat\u00e9ral avec un oxyde d&#8217;aluminium. Enfin, FOTON est reconnu pour leur d\u00e9veloppement sur les mat\u00e9riaux di\u00e9lectriques d\u00e9di\u00e9s aux miroirs de Bragg.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Objectifs<\/h2>\n\n\n\n<p>Ce projet est organis\u00e9 en 4 t\u00e2ches, une pour le management et 3 pour les d\u00e9veloppements techniques. La premi\u00e8re partie (t\u00e2ches 2 et 3) du projet MIMIC-SEL permettra de d\u00e9velopper les \u00e9l\u00e9ments qui constituent la structure VCSEL comme la zone active et les miroirs de Bragg pour un fonctionnement efficace au del\u00e0 de 3\u00b5m. Cette partie permettra de d\u00e9terminer les param\u00e8tres cl\u00e9s comme le gain, le pouvoir r\u00e9flecteur, les pertes optiques, les propri\u00e9t\u00e9s thermiques pour concevoir le VCSEL. La derni\u00e8re partie (t\u00e2che 4) est reli\u00e9 \u00e0 la r\u00e9alisation, la caract\u00e9risation et \u00e0 son application \u00e0 la d\u00e9tection de gaz.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Production scientifique<\/h2>\n\n\n<div id=\"wphal-content\"><div id=\"meta\">\n        <div class=\"display\" id=\"wphal-contact\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Contact<\/h3>\n\n            <ul id=\"wphal-cont\" style=\"list-style-type: none\"><\/ul>\n        <\/div>\n        <div class=\"display\" id=\"wphal-disciplines\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Disciplines<\/h3><\/div>\n        <div class=\"display\" id=\"wphal-keywords\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Mots-clefs<\/h3><\/div>\n        <div class=\"display\" id=\"wphal-auteurs\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Auteurs<\/h3><\/div>\n        <div class=\"display\" id=\"wphal-affiliated\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Auteurs de la structure<\/h3><\/div>\n        <div class=\"display\" id=\"wphal-revues\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Revues<\/h3><\/div>\n        <div class=\"display\" id=\"wphal-annees\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Ann\u00e9e de production<\/h3><\/div>\n        <div class=\"display\" id=\"wphal-insts\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Institutions<\/h3><\/div>\n       <div class=\"display\" id=\"wphal-labs\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">Laboratoires<\/h3><\/div>\n       <div class=\"display\" id=\"wphal-depts\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">D\u00e9partements<\/h3><\/div>\n       <div class=\"display\" id=\"wphal-equipes\" style=\"display: none\">\n            <h3 class=\"wphal-titre\">\u00c9quipes de recherche<\/h3><\/div>\n    <div class=\"display\" id=\"publications\"><div class=\"counter-doc\"><span class=\"wphal-nbtot\">12 <\/span>documents<\/div><br><div class=\"grp-div\"><h3 class=\"wphal-titre-groupe\">Articles dans une revue<span class=\"wphal-nbmetadata\" style=\"margin-left:10px\">7 documents<\/span><\/h3><div class=\"grp-content\"><ul><li>Eric Tourni\u00e9, Laura Monge Bartolome, Marta Rio Calvo, Zeineb Loghmari, Daniel D\u00edaz-Thomas, et al.. Mid-infrared III\u2013V semiconductor lasers epitaxially grown on Si substrates. <i>Light: Science and Applications<\/i>, 2022, 11, <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1038\/s41377-022-00850-4\">&#x27E8;10.1038\/s41377-022-00850-4&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/hal.science\/hal-03684843v1\">&#x27E8;hal-03684843&#x27E9;<\/a><\/li><li>St\u00e9phane Calvez, Oleksandr Stepanenko, Kevin Louarn, Emmanuelle Daran, Alexandre Arnoult, et al.. Selective wet oxidation of AlAsSb alloys on GaAs. <i>AIP Advances<\/i>, 2021, 11 (12), pp.125010. <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1063\/5.0073200\">&#x27E8;10.1063\/5.0073200&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/laas.hal.science\/hal-03469949v1\">&#x27E8;hal-03469949&#x27E9;<\/a><\/li><li>Laurent Cerutti, Daniel A D\u00edaz Thomas, Jean-Baptiste Rodriguez, Marta Rio Calvo, Gilles Patriarche, et al.. Quantum well interband semiconductor lasers highly tolerant to dislocations. <i>Optica<\/i>, 2021, 8 (11), pp.1397-1402. <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1364\/optica.438272\">&#x27E8;10.1364\/optica.438272&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/hal.science\/hal-03417026v1\">&#x27E8;hal-03417026&#x27E9;<\/a><\/li><li>Daniel D\u00edaz-Thomas, Oleksandr Stepanenko, Micha\u00ebl Bahriz, St\u00e9phane Calvez, Thomas Batte, et al.. 3.3 \u00b5m interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth. <i>Semiconductor Science and Technology<\/i>, 2020, 35 (12), pp.125029. <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1088\/1361-6641\/abbebc\">&#x27E8;10.1088\/1361-6641\/abbebc&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/laas.hal.science\/hal-02959663v1\">&#x27E8;hal-02959663&#x27E9;<\/a><\/li><li>D. A D\u00edaz-Thomas, Oleksandr Stepanenko, Micha\u00ebl Bahriz, St\u00e9phane Calvez, E. Tourni\u00e9, et al.. Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3\u2005\u00b5m. <i>Optics Express<\/i>, 2019, 27 (22), pp.31425. <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1364\/OE.27.031425\">&#x27E8;10.1364\/OE.27.031425&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/hal.umontpellier.fr\/hal-02345145v1\">&#x27E8;hal-02345145&#x27E9;<\/a><\/li><li>St\u00e9phane Calvez, Alexandre Arnoult, Antoine Monmayrant, Henri Camon, Guilhem Almuneau. Anisotropic lateral oxidation of Al-III-V semiconductors: inverse problem and circular aperture fabrication. <i>Semiconductor Science and Technology<\/i>, 2019, 34 (1), pp.015014. <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1088\/1361-6641\/aaf2f1\">&#x27E8;10.1088\/1361-6641\/aaf2f1&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/laas.hal.science\/hal-01933226v1\">&#x27E8;hal-01933226&#x27E9;<\/a><\/li><li>St\u00e9phane Calvez, Gael Lafleur, Alexandre Arnoult, Antoine Monmayrant, Henri Camon, et al.. Modelling anisotropic lateral oxidation from circular mesas. <i>Optical Materials Express<\/i>, 2018, 8 (7), pp.2436-2438. <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1364\/OME.8.001762\">&#x27E8;10.1364\/OME.8.001762&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/hal.science\/hal-01809678v1\">&#x27E8;hal-01809678&#x27E9;<\/a><\/li><\/ul><\/div><\/div><br><div class=\"grp-div\"><h3 class=\"wphal-titre-groupe\">Communications dans un congr\u00e8s<span class=\"wphal-nbmetadata\" style=\"margin-left:10px\">5 documents<\/span><\/h3><div class=\"grp-content\"><ul><li>Eric Tourni\u00e9, M Rio Calvo, L Monge-Bartolome, A Gilbert, A Remis, et al.. MBE Growth of Mid-Infrared Lasers on Silicon. <i>Inteernational Conference on Molecular beam Epitaxy, ICMBE 2022<\/i>, Sep 2022, Sheffield, United Kingdom. <a target=\"_blank\" href=\"https:\/\/hal.science\/hal-03791638v1\">&#x27E8;hal-03791638&#x27E9;<\/a><\/li><li>Daniel Andres D\u00edaz Thomas, Oleksandr Stepanenko, Micha\u00ebl Bahriz, St\u00e9phane Calvez, Thomas Batte, et al.. Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layers. <i>Compound Semiconductor Week 2021 (CSW 2021)<\/i>, May 2021, Stockholm (online), Sweden. <a target=\"_blank\" href=\"https:\/\/laas.hal.science\/hal-03358749v1\">&#x27E8;hal-03358749&#x27E9;<\/a><\/li><li>St\u00e9phane Calvez, Oleksandr Stepanenko, Daniel A D\u00edaz-Thomas, Thomas Batte, M. Bahriz, et al.. Progress in Interband Cascade Lasers: from edge emitting lasers to VCSELs. <i>2020 22nd International Conference on Transparent Optical Networks (ICTON)<\/i>, Jul 2020, Bari, Italy. pp.1-4, <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1109\/ICTON51198.2020.9203274\">&#x27E8;10.1109\/ICTON51198.2020.9203274&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/laas.hal.science\/hal-02996714v1\">&#x27E8;hal-02996714&#x27E9;<\/a><\/li><li>St\u00e9phane Calvez, Gael Lafleur, Oleksandr Stepanenko, Alexandre Arnoult, Antoine Monmayrant, et al.. Controlled Oxidation of III-V Semiconductors for Photonic Devices. <i>21st International Conference on Transparent Optical Networks (ICTON 2019)<\/i>, Jul 2019, Angers, France. pp.1-4, <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1109\/ICTON.2019.8840290\">&#x27E8;10.1109\/ICTON.2019.8840290&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/laas.hal.science\/hal-02296303v1\">&#x27E8;hal-02296303&#x27E9;<\/a><\/li><li>Daniel Andres Diaz Thomas, Oleksandr Stepanenko, Micha\u00ebl Bahriz, St\u00e9phane Calvez, Thomas Batte, et al.. Towards MIR VCSELs operating in CW at RT. <i>Compound Semiconductor Week 2019 (CSW 2019)<\/i>, May 2019, Nara, Japan. <a target=\"_blank\" href=\"https:\/\/dx.doi.org\/10.1109\/iciprm.2019.8819164\">&#x27E8;10.1109\/iciprm.2019.8819164&#x27E9;<\/a>. <a target=\"_blank\" href=\"https:\/\/laas.hal.science\/hal-03012184v1\">&#x27E8;hal-03012184&#x27E9;<\/a><\/li><\/ul><\/div><\/div><br><\/div>\n    <\/div>\n<\/div><div class=\"wphal-footer\"><p style=\"color:#B3B2B0\">Documents r\u00e9cup\u00e9r\u00e9s de l'archive ouverte HAL&nbsp;<a href=\"https:\/\/hal.science\/\" target=\"_blank\"><img decoding=\"async\" alt=\"logo\" src=\"https:\/\/www.institut-foton.eu\/wp-content\/plugins\/hal\/img\/logo-hal.png\" style=\"width:90px\"><\/a><\/p><\/div>\n\n\n\n<h2 class=\"wp-block-heading\">Partenaires<\/h2>\n\n\n\n<p>IES &#8211; LAAS &#8211; Foton-OHM <\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Coordinateur<\/h2>\n\n\n\n<p>Laurent CERUTTI (IES)<\/p>\n\n\n\n<p>Coordinateur i-FOTON: <a href=\"https:\/\/www.institut-foton.eu\/levallois-christophe\/\" data-type=\"post\" data-id=\"3632\">Christophe LEVALLOIS<\/a><\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Financement<\/h2>\n\n\n\n<p>ANR (516 k\u20ac)<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Voir en ligne<\/h2>\n\n\n\n<figure class=\"wp-block-image size-large is-resized\"><a href=\"https:\/\/anr.fr\/Projet-ANR-16-CE24-0011\"><img loading=\"lazy\" decoding=\"async\" width=\"1024\" height=\"390\" src=\"https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-1024x390.jpg\" alt=\"\" class=\"wp-image-1364\" style=\"width:97px;height:37px\" srcset=\"https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-1024x390.jpg 1024w, https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-300x114.jpg 300w, https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle-768x292.jpg 768w, https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2023\/10\/ANR-logo-2021-sigle.jpg 1211w\" sizes=\"auto, (max-width: 1024px) 100vw, 1024px\" \/><\/a><\/figure>\n","protected":false},"excerpt":{"rendered":"<p>septembre 2016 \u2013 aout 2020<br \/>\nCoordinateur iFOTON: Christophe LEVALLOIS<\/p>\n","protected":false},"author":9,"featured_media":1400,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[25],"tags":[110,43],"class_list":["post-8602","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-projets","tag-departement-ohm","tag-lasers-semiconducteurs"],"translation":{"provider":"WPGlobus","version":"3.0.2","language":"en","enabled_languages":["fr","en"],"languages":{"fr":{"title":true,"content":true,"excerpt":true},"en":{"title":false,"content":false,"excerpt":false}}},"_links":{"self":[{"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/posts\/8602","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/users\/9"}],"replies":[{"embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/comments?post=8602"}],"version-history":[{"count":1,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/posts\/8602\/revisions"}],"predecessor-version":[{"id":8603,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/posts\/8602\/revisions\/8603"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/media\/1400"}],"wp:attachment":[{"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/media?parent=8602"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/categories?post=8602"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/tags?post=8602"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}