{"id":8969,"date":"2023-11-21T09:52:00","date_gmt":"2023-11-21T08:52:00","guid":{"rendered":"https:\/\/www.institut-foton.eu\/?p=8969"},"modified":"2025-04-22T12:26:56","modified_gmt":"2025-04-22T10:26:56","slug":"role-of-cu-content-in-the-crystal-structure-and-phase-stability-of-epitaxial-cuingas2-films-on-gap-si001","status":"publish","type":"post","link":"https:\/\/www.institut-foton.eu\/en\/role-of-cu-content-in-the-crystal-structure-and-phase-stability-of-epitaxial-cuingas2-films-on-gap-si001\/","title":{"rendered":"Role of Cu content in the crystal structure and phase stability of epitaxial Cu(In,Ga)S2 films on GaP\/Si(001)"},"content":{"rendered":"\n<p>This study examines the growth condition to obtain a single-phase Cu(In,Ga)S<sub>2<\/sub> (CIGS) chalcopyrite film epitaxially grown by coevaporation on a GaP\/Si(001) pseudo-substrate. In particular, we report the structural differences between KCN-etched Cu-rich and Cu-poor CIGS films coevaporated on GaP\/Si(001) by 1-stage process. The Cu-poor CIGS film consists of at least three phases; the main crystal is found to be chalcopyrite-ordered, coexisting with In-rich CuIn5S8, and CuAu-ordered CuInS2, all sharing epitaxial relationships with each other and the GaP\/Si(001) pseudo-substrate. On the other hand, the Cu-rich CIGS film is single-phase chalcopyrite and displays sharper X-ray diffraction peaks and a lower density of microtwin defects. The elimination of the secondary CuAu-ordered phase with Cu excess is demonstrated. In both films, the chalcopyrite crystal exclusively grows with its c-axis aligned with the out-of-plane direction of Si[001]. This study confirms prior findings on the thermodynamics of Cu\u2013In-Ga-S and the stability of secondary phases. This work paves the way to the future development of CIGS\/Si tandem solar cells.<\/p>\n\n\n\n<div class=\"wp-block-media-text is-stacked-on-mobile\" style=\"grid-template-columns:47% auto\"><figure class=\"wp-block-media-text__media\"><img loading=\"lazy\" decoding=\"async\" width=\"691\" height=\"971\" src=\"https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2024\/02\/RFM-PV-2022-Fig.jpg\" alt=\"\" class=\"wp-image-8971 size-full\" srcset=\"https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2024\/02\/RFM-PV-2022-Fig.jpg 691w, https:\/\/www.institut-foton.eu\/wp-content\/uploads\/2024\/02\/RFM-PV-2022-Fig-213x300.jpg 213w\" sizes=\"auto, (max-width: 691px) 100vw, 691px\" \/><\/figure><div class=\"wp-block-media-text__content\">\n<p>(a) Low resolution longitudinal \u03c9\/2\u03b8 scan along the [001] direction of the Si substrate. Transverse \u03c9 scans displaying the highly textures nature of the (a1) \u039e1 and (a2) \u039e2 CA peaks. (bc) Pole figures of the (b) Cu-poor and (c) Cu-rich sample at the theoretical Bragg angle of the CH(013) reflection, exclusive to the CH. A white crosshair point at the predicted position of the CH(013) planes, not accounting for the 6\u00b0 miscut tilt. (d) Raman spectra of the Cu-rich and Cu-poor samples at 514&nbsp;nm excitation wavelength. Inset: Zoom at the position of the Cu<sub>2-x<\/sub>S A<sub>1<\/sub> peak for the as grown and KCN-etched Cu-rich sample. (e) Schematics of the crystal stack corresponding to the following epitaxial relationship: CH[100](001)\/\/GaP[100](001)\/\/Si[100](001).<\/p>\n<\/div><\/div>\n\n\n\n<p>Article published in: Materials Science in Semiconductor Processing<\/p>\n\n\n\n<p><a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S1369800123003785?via%3Dihub\">&#8216;Unveiling the role of copper content in the crystal structure and phase stability of epitaxial Cu(In,Ga)S<sub>2<\/sub> films on GaP\/Si(001)&#8217; E. Bertin, O. Durand, A. L\u00e9toublon, C. Cornet, L. Arzel, L. Choubrac, R. Bernard, E. Gautron, S. Harel, M. Jullien, T. Rohel, L. Assmann, N. Barreau, <em>Mater Sci in Semicon Proc<\/em> <strong>166<\/strong>, 107685 (2023) <\/a><\/p>\n\n\n\n<p>This work is supported by the French National Research Agency project EPCIS (Grant no. ANR-20-CE05-0038)<\/p>\n","protected":false},"excerpt":{"rendered":"<p>November 2023<\/p>\n","protected":false},"author":9,"featured_media":8970,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[36],"tags":[45,110],"class_list":["post-8969","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites","tag-energies","tag-departement-ohm"],"translation":{"provider":"WPGlobus","version":"3.0.2","language":"en","enabled_languages":["fr","en"],"languages":{"fr":{"title":true,"content":true,"excerpt":true},"en":{"title":false,"content":false,"excerpt":false}}},"_links":{"self":[{"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/posts\/8969","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/users\/9"}],"replies":[{"embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/comments?post=8969"}],"version-history":[{"count":4,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/posts\/8969\/revisions"}],"predecessor-version":[{"id":8984,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/posts\/8969\/revisions\/8984"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/media\/8970"}],"wp:attachment":[{"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/media?parent=8969"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/categories?post=8969"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.institut-foton.eu\/en\/wp-json\/wp\/v2\/tags?post=8969"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}