PALLIKKARA CHANDRASEKHARAN Sreejith

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18 documents

Articles dans une revue

  • Sreejith Pallikkara Chandrasekharan, Sofia Apergi, Chen Wei, Federico Panciera, Laurent Travers, et al.. Ab initio modeling of morphology with experimental comparison in a nanoscale heterostructure. Physical Review Materials, 2026, 10 (3), pp.L030401. ⟨10.1103/5k42-345z⟩. ⟨hal-05587910⟩
  • Sofia Apergi, Sreejith Pallikkara Chandrasekharan, C. Cornet, Laurent Pedesseau. Computational Assessment of Nonpolar and Polar GaP Terminations for Photoelectrochemical Water Splitting. The Journal of physical chemistry, 2025, 129 (36), pp.16308-16318. ⟨10.1021/acs.jpcc.5c03423⟩. ⟨hal-05230228⟩
  • S Pallikkara Chandrasekharan, D Gupta, C Cornet, L Pedesseau. Inevitable Si surface passivation prior to III-V/Si epitaxy: Strong impact on wetting properties. Physical Review B, 2024, 109 (4), pp.045304. ⟨10.1103/physrevb.109.045304⟩. ⟨hal-04429691⟩
  • Sreejith Pallikkara Chandrasekharan, Seetha Lakshmy, Saju Joseph, Nandakumar Kalarikkal. Carcinogenic dioxane detection using pristine and metal-doped 2D VSe2: Insights from density functional theory simulations. AIP Advances, 2023, 13 (6), pp.065024. ⟨10.1063/5.0139779⟩. ⟨hal-04198629⟩
  • S. Pallikkara Chandrasekharan, I. Lucci, D. Gupta, C. Cornet, L. Pedesseau. Determination of III-V/Si absolute interface energies: impact on wetting properties. Physical Review B, 2023, 108 (7), pp.075305. ⟨10.1103/PhysRevB.108.075305⟩. ⟨hal-04224894v2⟩

Communications dans un congrès

  • Sreejith Pallikkara Chandrasekharan, Sofia Apergi, Chen Wei, Federico Panciera, Laurent Travers, et al.. Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapes. GDR MatEpi, CNRS, Nov 2025, Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) in Villeneuve-d'Ascq, France. ⟨hal-05357086⟩
  • Sreejith Pallikkara Chandrasekharan, Audrey Gilbert, Chen Wei, Federico Panciera, Laurent Travers, et al.. III-V/Si Heteroepitaxy: Understanding and Mastering Growth Fundamentals. 24th American Conference on Crystal Growth and Epitaxy (ACCGE-24), Jul 2025, Stevenson, United States. ⟨hal-05204877⟩
  • Sreejith Pallikkara Chandrasekharan, Sofia Apergi, Wei Chen, Federico Panciera, Laurent Travers, et al.. Predictions of Wulff-Kaischew equilibrium shapes during heteroepitaxial Growth of III-V on Si: DFT and in-situ Experiments. APS Global Physics Summit 2025, American Physical Society (APS), Mar 2025, Anaheim, California, United States. ⟨hal-05212796⟩
  • Charles Cornet, Audrey Gilbert, Sreejith Pallikkara Chandrasekharan, Divishth Gupta, Laurent Cerutti, et al.. Understanding III-V/Si Heteroepitaxy: Experiments and Theory. 8th European conference on crystal growth, Jul 2024, Warsaw, Poland. ⟨hal-04745129⟩
  • Divishth Gutpa, Sreejith Pallikkara Chandrasekharan, Simon Thébaud, Laurent Pedesseau, Charles Cornet. Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundaries. EMRS spring meeting 2024, May 2024, Strasbourg, France. ⟨hal-04745358⟩
  • C. Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert, Divita Gupta, Philippe Vennéguès, et al.. III-V/Si epitaxial growth and antiphase domains: a matter of symmetry. OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France. ⟨hal-04738319⟩
  • Sreejith Pallikkara Chandrasekharan, D Gupta, Anne Ponchet, Gilles Patriarche, Jean-Baptiste Rodriguez, et al.. Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations. “Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France. ⟨hal-04224975⟩

Poster de conférence

  • Sreejith Pallikkara Chandrasekharan, Junke Jiang, Simon Thébaud, Arnaud Fihey, Laurent Pedesseau, et al.. Semiempirical DFTB Approaches for 3D and 2D Perovskites and Their Heterostructures. Journées Pérovskites Halogénées (JPH) 2026, May 2026, Saint-Lambert, France. 2026. ⟨hal-05620159⟩
  • Sreejith Pallikkara Chandrasekharan, Fauzia Jabeen, Charles Cornet, Laurent Pedesseau. Atomic scale description of III-V/Si (001) heteroepitaxial crystals. 23rd International Conference on Molecular-Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan. ⟨hal-04745307⟩
  • Sreejith Pallikkara Chandrasekharan, Divishth Gutpa, Charles Cornet, Laurent Pedesseau. Heteroepitaxial growth of III-V on Si: a DFT perspective. 36th International Confererence on the Physics of Semiconductors 2024., Jul 2024, Ottawa, Canada. ⟨hal-04745324⟩
  • Sreejith Pallikkara Chandrasekharan, Divishth Gutpa, C. Cornet, Laurent Pedesseau. Impact of initial surface passivation on wetting properties analysis during III-V/Si epitaxy. E-MRS 2024 Spring meeting, May 2024, Strasbourg, France. ⟨hal-04597986⟩
  • Sreejith Pallikkara Chandrasekharan, Ida Lucci, Divishth Gutpa, Charles Cornet, Laurent Pedesseau. Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristics. Journées Surfaces & Interfaces 2024, Jan 2024, Grenoble, France. ⟨hal-04417767⟩
  • Sreejith Pallikkara Chandrasekharan, Divishth Gutpa, Laurent Pedesseau, Charles Cornet. Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculations. Journée Scientifique SFP-SCF Bretagne & Pays de Loire 2023, May 2023, Rennes, France. 2023. ⟨hal-04110076v2⟩

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