PALLIKKARA CHANDRASEKHARAN Sreejith

PhD

Team: Équipe OHM

PhD title: « Modélisation DFT des surfaces and interfaces pour l’intégration-monolithique de semiconducteurs III-V/Si »
Under the supervision of PEDESSEAU Laurent and CORNET Charles

Contact

(+33)2 23 23 82 27

@

Building 10 – Office 124

🖃 INSA
20 avenue des Buttes de Coësmes
CS 70839
35708 Rennes Cedex 7

🌐 Site web personnel

Publications

Google Scholar
ResearchGate
HAL
12 documents

Journal articles

  • S Pallikkara Chandrasekharan, D Gupta, C Cornet, L Pedesseau. Inevitable Si surface passivation prior to III-V/Si epitaxy: Strong impact on wetting properties. Physical Review B, 2024, 109 (4), pp.045304. ⟨10.1103/physrevb.109.045304⟩. ⟨hal-04429691⟩
  • Sreejith Pallikkara Chandrasekharan, Seetha Lakshmy, Saju Joseph, Nandakumar Kalarikkal. Carcinogenic dioxane detection using pristine and metal-doped 2D VSe2: Insights from density functional theory simulations. Aip Advances, 2023, 13 (6), pp.065024. ⟨10.1063/5.0139779⟩. ⟨hal-04198629⟩
  • S. Pallikkara Chandrasekharan, I. Lucci, D. Gupta, C. Cornet, L. Pedesseau. Determination of III-V/Si absolute interface energies: impact on wetting properties. Physical Review B, 2023, 108 (7), pp.075305. ⟨10.1103/PhysRevB.108.075305⟩. ⟨hal-04224894v2⟩

Conference papers

  • Charles Cornet, Audrey Gilbert, Sreejith Pallikkara Chandrasekharan, Divishth Gupta, Laurent Cerutti, et al.. Understanding III-V/Si Heteroepitaxy: Experiments and Theory. 8th European conference on crystal growth, Jul 2024, Warsaw, Poland. ⟨hal-04745129⟩
  • Divishth Gutpa, Sreejith Pallikkara Chandrasekharan, Simon Thébaud, Laurent Pedesseau, Charles Cornet. Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundaries. EMRS spring meeting 2024, May 2024, Strasbourg, France. ⟨hal-04745358⟩
  • C. Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert, Divita Gupta, Philippe Vennéguès, et al.. III-V/Si epitaxial growth and antiphase domains: a matter of symmetry. OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France. ⟨hal-04738319⟩
  • Sreejith Pallikkara Chandrasekharan, D Gupta, Anne Ponchet, Gilles Patriarche, Jean-Baptiste Rodriguez, et al.. Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations. “Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France. ⟨hal-04224975⟩

Poster communications

  • Sreejith Pallikkara Chandrasekharan, Fauzia Jabeen, Charles Cornet, Laurent Pedesseau. Atomic scale description of III-V/Si (001) heteroepitaxial crystals. 23rd International Conference on Molecular-Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan. ⟨hal-04745307⟩
  • Sreejith Pallikkara Chandrasekharan, Divishth Gutpa, Charles Cornet, Laurent Pedesseau. Heteroepitaxial growth of III-V on Si: a DFT perspective. 36th International Confererence on the Physics of Semiconductors 2024., Jul 2024, Ottawa, Canada. ⟨hal-04745324⟩
  • Sreejith Pallikkara Chandrasekharan, Divishth Gutpa, C. Cornet, Laurent Pedesseau. Impact of initial surface passivation on wetting properties analysis during III-V/Si epitaxy. E-MRS 2024 Spring meeting, May 2024, Strasbourg, France. ⟨hal-04597986⟩
  • Sreejith Pallikkara Chandrasekharan, Ida Lucci, Divishth Gutpa, Charles Cornet, Laurent Pedesseau. Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristics. Journées Surfaces & Interfaces 2024, Jan 2024, Grenoble, France. ⟨hal-04417767⟩
  • Sreejith Pallikkara Chandrasekharan, Divishth Gutpa, Laurent Pedesseau, Charles Cornet. Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculations. Journée Scientifique SFP-SCF Bretagne & Pays de Loire 2023, May 2023, Rennes, France. 2023. ⟨hal-04110076v2⟩

PALLIKKARA CHANDRASEKHARAN Sreejith
Tagged on:

Leave a Reply