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82 documents

Articles dans une revue21 document

  • Lipin Chen, Mahdi Alqahtani, Christophe Levallois, Antoine Létoublon, Julie Stervinou, et al.. Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells. Solar Energy Materials and Solar Cells, 2021, 221, pp.110888. ⟨10.1016/j.solmat.2020.110888⟩. ⟨hal-03031939⟩
  • Lipin Chen, Oliver Skibitzki, Laurent Pedesseau, Antoine Létoublon, Julie Stervinou, et al.. Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities. ACS Nano, 2020, 14 (10), pp.13127-13136. ⟨10.1021/acsnano.0c04702⟩. ⟨hal-03032030⟩
  • Mahdi Alqahtani, Sanjayan Sathasivam, Lipin Chen, Pamela Jurczak, Rozenn Piron, et al.. Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting. Sustainable Energy & Fuels, 2019, 3 (7), pp.1720-1729. ⟨10.1039/C9SE00113A⟩. ⟨hal-02178176⟩
  • R. Piron, T. Blenski. Average-atom model calculations of dense-plasma opacities: Review and potential applications to white-dwarf stars. Contributions to Plasma Physics, 2018, 58 (1), pp.30 - 41. ⟨10.1002/ctpp.201700095⟩. ⟨cea-01881612⟩
  • Kamil Klaime, Cosimo Calo, Rozenn Piron, Cyril Paranthoen, Dame Thiam, et al.. 23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers. Optics Express, 2013, 21 (23), pp.29000-29005. ⟨10.1364/OE.21.029000⟩. ⟨hal-01167812⟩
  • Per Lunnemann, Sara Ek, Kresten Yvind, Rozenn Piron, Jesper Mørk. Nonlinear carrier dynamics in a quantum dash optical amplifier. New Journal of Physics, 2012, 14, pp.013042. ⟨10.1088/1367-2630/14/1/013042⟩. ⟨hal-00663138⟩
  • Madhoussoudhana Dontabactouny, Rozenn Piron, Kamil Klaime, Nicolas Chevalier, Karine Tavernier, et al.. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band. Journal of Applied Physics, 2012, 111, pp.23102. ⟨10.1063/1.3677976⟩. ⟨hal-00662698⟩
  • Frédéric Grillot, Kiril Veselinov, Mariangela Gioannini, Ivo Montrosset, Jacky Even, et al.. Spectral Analysis of 1.55-μm InAs/InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model. IEEE Journal of Quantum Electronics, 2009, 45 (7), pp.872-878. ⟨10.1109/JQE.2009.2013174⟩. ⟨hal-00501878⟩
  • S. Azouigui, B. Dagens, François Lelarge, J.G. Provost, D. Make, et al.. Optical feedback tolerance of quantum dot and quantum dash based semiconductor lasers operating at 1.55µm. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 15 (3), pp.764. ⟨10.1109/JSTQE.2009.2013870⟩. ⟨hal-00496984⟩
  • Dayong Zhou, Rozenn Piron, Madhoussoudhana Dontabactouny, Olivier Dehaese, Frederic Grillot, et al.. Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique. Applied Physics Letters, 2009, 94 (8), pp.081107. ⟨10.1063/1.3088862⟩. ⟨hal-00492543⟩
  • Georges Elias, Antoine Letoublon, Rozenn Piron, Ibrahim Alghoraibi, Abdulhadi Nakkar, et al.. Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2009, 48 (7), pp.70204. ⟨10.1143/JJAP.48.070204⟩. ⟨hal-00485726⟩
  • Dayong Zhou, Rozenn Piron, Madhoussoudhana Dontabactouny, Olivier Dehaese, Frederic Grillot, et al.. Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy. Electronics Letters, 2009, 45 (1), pp.50 - 51. ⟨10.1049/el:20093066⟩. ⟨hal-00493000⟩
  • Anthony Martinez, Kamel Merghem, Sophie Bouchoule, Gautier Moreau, Abderrahim Ramdane, et al.. Dynamic properties of InAs/InP(311B) quantum dot Fabry-Perot lasers emitting at 1.52-μm. Applied Physics Letters, 2008, pp.021101. ⟨10.1063/1.2957479⟩. ⟨hal-00494345⟩
  • Kiril Veselinov, Frédéric Grillot, Mariangela Gioannini, Ivo Montrosset, Estelle Homeyer, et al.. Lasing spectra of 1.55μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments. Optical and Quantum Electronics, 2008, 40 (2-4), pp.222-237. ⟨10.1007/s11082-008-9197-6⟩. ⟨hal-00502374⟩
  • Dayong Zhou, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Estelle Homeyer, et al.. Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate. Applied Physics Letters, 2008, 93, pp.161104. ⟨10.1063/1.3005194⟩. ⟨hal-00491836⟩
  • Gautier Moreau, Kamel Merghem, Anthony Martinez, Sophie Bouchoule, A. Ramdane, et al.. Demonstration of 1.51μm InAs/InP(311)B quantum dot single-mode laser operating under continuous wave. IET Optoelectron., 2007, pp.255-258. ⟨10.1049/iet-opt:20070037⟩. ⟨hal-00494346⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Karine Tavernier, et al.. Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2007, 46 (10A), pp.6903-6905. ⟨10.1143/JJAP.46.6903⟩. ⟨hal-00493021⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Karine Tavernier, et al.. First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer. Semiconductor Science & Technology, 2007, 22, pp.827-830. ⟨10.1088/0268-1242/22/7/028⟩. ⟨hal-00493037⟩
  • Nicolas Massé, Estelle Homeyer, I. P. Marko, A.R. Adams, S.J. Sweeney, et al.. Temperature and pressure dependence of the recombination processes in 1.5 µm InAs/InP(311)B quantum dot lasers. Applied Physics Letters, 2007, 91 (13), pp.131113. ⟨10.1063/1.2790777⟩. ⟨hal-00495725⟩
  • Ibrahim Alghoraibi, Tony Rohel, Rozenn Piron, Nicolas Bertru, Cyril Paranthoën, et al.. Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates. Applied Physics Letters, 2007, 91, pp.261105. ⟨10.1063/1.2827177⟩. ⟨hal-00485705⟩
  • Philippe Caroff, Cyril Paranthoën, Charly Platz, Olivier Dehaese, Hervé Folliot, et al.. High-gain and low-threshold InAs quantum-dot lasers on InP. Applied Physics Letters, 2005, 87, pp.243107. ⟨10.1063/1.2146063⟩. ⟨hal-00485764⟩

Communications dans un congrès52 document

  • Lipin Chen, Mahdi Alqahtani, Christophe Levallois, Antoine Létoublon, Julie Le Pouliquen, et al.. GaPSb/Si tandem material with APBs for efficient overall water splitting. Journées Nanomatériaux de Rennes, Jan 2020, Rennes, France. ⟨hal-03032905⟩
  • Charles Cornet, Lipin Chen, Mahdi Alqahtani, Christophe Levallois, Antoine Létoublon, et al.. III-V/Si photoelectrodes: a new route for solar hydrogen production. 11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France. ⟨hal-02305423⟩
  • Charles Cornet, Ida Lucci, Lipin Chen, Laurent Pedesseau, Rozenn Bernard, et al.. Universal growth mechanism of III-V/Si: using antiphase boundaries for devices.. Réunion plénière du GDR Pulse (PULSE 2019), Jul 2019, Clermont-Ferrand, France. ⟨hal-02189095⟩
  • Lipin Chen, Christophe Levallois, Antoine Létoublon, Julie Le Pouliquen, Rozenn Piron, et al.. GaPSb/Si photoelectrode for Solar Fuel Production. European COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria. ⟨hal-03102622⟩
  • Ronan Tremblay, Yong Huang, Jean-Philippe Gauthier, Rozenn Piron, Alexandre Beck, et al.. Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layers. Compound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States. ⟨hal-01147506⟩
  • Kamil Klaime, Rozenn Piron, Frederic Grillot, Madhoussoudhana Dontabactouny, Slimane Loualiche, et al.. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers. SPIE Photonics West - OPTO 2013, Feb 2013, San Francisco, United States. pp.863407, ⟨10.1117/12.2005244⟩. ⟨hal-01167250⟩
  • Kamil Klaime, Rozenn Piron, Cyril Paranthoën, Thomas Batte, Frederic Grillot, et al.. High Frequency Quantum Dots Mode Locked Laser for Telecommunication Applications. European Semiconductor Laser Workshop (ESLW 2012), Sep 2012, Brussels, Belgium. ⟨hal-00806320⟩
  • Kamil Klaime, Rozenn Piron, Cyril Paranthoen, Thomas Batte, Frederic Grillot, et al.. 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate. 24th International Conference on Indium Phosphide and Related Materials (IPRM 2012), Aug 2012, Santa Barbara, United States. pp.181-184, ⟨10.1109/ICIPRM.2012.6403352⟩. ⟨hal-00726881⟩
  • Cosimo Calo, Kamel Merghem, Ricardo Rosales, Anthony Martinez, Abderrahim Ramdane, et al.. Self Pulsation in Quantum Dot lasers operating at 1.55 μm based on (311)B substrates. International Nano-Optoelectronics Workshop 2012, Aug 2012, Berkeley, United States. pp.1. ⟨hal-00726928⟩
  • Madhoussoudhana Dontabactouny, Rozenn Piron, Kamil Klaime, Nicolas Chevalier, Karine Tavernier, et al.. 10.6 GHz InAs/InP quantum dash two-section passively mode-locked lasers in L band.. Journées Boîtes Quantiques - Quantum Dots France, Jun 2011, Toulouse, France. ⟨hal-00662957⟩
  • Christophe Levallois, Jean-Philippe Gauthier, Cyril Paranthoen, Rozenn Piron, Frederic Grillot, et al.. Lasers devices based on nanostructures grown on InP substrate for 1.55 μm emission. Workshop Frontier 2010, Dec 2010, Albi, France. ⟨hal-00589343⟩
  • Thomas Batte, Christophe Levallois, Olivier Dehaese, Frederic Grillot, Azar Maalouf, et al.. Caractérisation d'un dépôt multicouches diélectriques par pulvérisation cathodique - application à la réalisation de lasers monomodes à nanostructures quantiques. 29è Journées Nationales d'Optique Guidée (JNOG 2010), Oct 2010, Besançon, France. ⟨hal-00589348⟩
  • Rozenn Piron, Olivier Dehaese, Frederic Grillot, Estelle Homeyer, Dayong Zhou, et al.. Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µm. Séminaire PONANT 2010, Jul 2010, Rennes, France. ⟨hal-00662947⟩
  • Rozenn Piron, Madhoussoudhana Dontabactouny, C. Rosenberg, E. Semenova, D. Larsson, et al.. Monolithic 1.59 µm InAs/InP quantum dash passively mode-locked lasers. Advances in Molecular Nonlinear Optics : Information Technology and Life Sciences (AMARIS'10), May 2010, Cachan, France. ⟨hal-00662940⟩
  • Jacky Even, Frederic Grillot, Kiril Veselinov, Rozenn Piron, Charles Cornet, et al.. Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers. SPIE Photonics Europe 2010, Apr 2010, Bruxelles, Belgium. pp.77202F, ⟨10.1117/12.863580⟩. ⟨hal-00492346⟩
  • Madhoussoudhana Dontabactouny, C. Rosenberg, E. Semenova, D. Larsson, K. Yvind, et al.. 10-GHz 1.59 µm quantum dash passively mode-locked two-section lasers. SPIE Photonics Europe 2010, Apr 2010, Bruxelles, Belgium. pp.77201A, ⟨10.1117/12.854705⟩. ⟨hal-00662927⟩
  • Madhoussoudhana Dontabactouny, C. Rosenberg, E. Semenova, D. Larsson, K. Yvind, et al.. Monolithic 1.59 µm InAs/InP Quantum Dash Passively Mode-Locked Lasers. Semiconductor and Integrated OptoElectronics conference, SIOE, Mar 2010, Cardiff, United Kingdom. ⟨hal-00662935⟩
  • Nicolas Bertru, Cyril Paranthoën, Olivier Dehaese, Hervé Folliot, Alain Le Corre, et al.. QD laser on InP substrate for 1.55 µm emission and beyond. SPIE Photonics West - OPTO 2010, Jan 2010, San Francisco, United States. pp.76081B, ⟨10.1117/12.848398⟩. ⟨hal-00485660⟩
  • Jean-François Hayau, Olivier Vaudel, Pascal Besnard, François Lelarge, B. Rousseau, et al.. Optical injection of quantum dot and quantum dash semiconductor lasers. Conference on Lasers and Electro Optics / European Quantum Electronics Conference 2009 (CLEO Europe/EQEC 2009), Jun 2009, Munich, Germany. pp.CB9.2, ⟨10.1109/CLEOE-EQEC.2009.5191534⟩. ⟨hal-00496853⟩
  • Georges Elias, Antoine Letoublon, Rozenn Piron, Ibrahim Alghoraibi, Karine Tavernier, et al.. Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrate. IPRM, Indium Phosphide & Related Materials, May 2009, Newportbeach, United States. pp.41 - 44, ⟨10.1109/ICIPRM.2009.5012422⟩. ⟨hal-00485799⟩
  • Frédéric Grillot, Kiril Veselinov, Mariangela Gioannini, Rozenn Piron, Estelle Homeyer, et al.. Theoretical analysis of 1.55μm InAs/InP (311B) quantum dot lasers based on a multi-population rate equation model. SPIE Photonics West, Jan 2009, France. pp.Proceedings Vol. 7211. ⟨hal-00536754⟩
  • Frédéric Grillot, Anthony Martinez, Kamel Merghem, Jean-Guy Provost, Francois Alexandre, et al.. Stable Above-Threshold Linewidth Enhancement Factor in a 1.52μm InAs/InP (311B) Quantum Dot Laser. LEOS, Nov 2008, United States. ⟨hal-00536757⟩
  • Jean-François Hayau, Julien Poette, Vincent Roncin, Pascal Besnard, Olivier Dehaese, et al.. Etude comparative du bruit dans des lasers à boites et à bâtonnets quantiques. 27èmes Journées Nationales d'Optique Guidée (JNOG 2008), Oct 2008, Lannion, France. pp.203-205. ⟨hal-00496867⟩
  • Anthony Martinez, Kamel Merghem, Jean-Guy Provost, Sophie Bouchoule, Gautier Moreau, et al.. Dynamic Properties of InAs/InP (311)B Quantum Dot Lasers Emitting at 1.52 μm,. The International Semiconductor Laser Conference, Sep 2008, Italy. ⟨hal-00536762⟩
  • Dayong Zhou, Rozenn Piron, Madhoussoudhana Dontabactouny, Estelle Homeyer, Olivier Dehaese, et al.. Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers. 9th International Conference Trends in Nanotechnology (TNT 2008), Sep 2008, Oviedo, Spain. pp.2217 - 2221, ⟨10.1002/pssc.200881729⟩. ⟨hal-00492826⟩
  • Rozenn Piron, Dayong Zhou, Madhoussoudhana Dontabactouny, Olivier Dehaese, Thomas Batte, et al.. 1.55 µm room-temperature continuous wave operation of InAs/InP (100) quantum dash ridge lasers. SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1. ⟨hal-00494186⟩
  • Dayong Zhou, Rozenn Piron, Madhoussoudhana Dontabactouny, Estelle Homeyer, Olivier Dehaese, et al.. Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current density. SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1. ⟨hal-00494175⟩
  • Jean-François Hayau, Julien Poette, Vincent Roncin, Pascal Besnard, Olivier Dehaese, et al.. Comparative study of intensity noise in quantum dash and quantum dot lasers. Semiconductor Quantum dot Devices and Applications (SQDA 2008), Jul 2008, Rennes, France. not specified. ⟨hal-00496864⟩
  • Dayong Zhou, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Estelle Homeyer, et al.. Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm. Indium Phosphide and Related Materials, IPRM, May 2008, Versailles, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4703027⟩. ⟨hal-00492842⟩
  • Nicolas Massé, Estelle Homeyer, Olivier Dehaese, Rozenn Piron, Frederic Grillot, et al.. Thermal properties of 1.5µm InAs/InP quantum dot lasers. European Semiconductor Laser Workshop (ESLW07), Sep 2007, Berlin, Germany. pp.1. ⟨hal-00496875⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Karine Tavernier, et al.. Comparative study of Single- and Double-capped InAs/InP (311)B QD lasers: effects on lasing characteristics. LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1. ⟨hal-00491814⟩
  • Slimane Loualiche, Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, et al.. InAs/InP quantum dot laser grown on (113)B InP substrate. LWQD : International workshop on long wavelength quantum dots : Growth and applications, Jul 2007, Rennes, France. ⟨hal-00486908⟩
  • Nicolas Massé, Estelle Homeyer, Olivier Dehaese, Rozenn Piron, Frederic Grillot, et al.. Recombination processes in 1.55µm InAs/InP quantum dot lasers. Semiconductor and Integrated Optoelectronics (SIOE), Apr 2007, Cardiff, United Kingdom. pp.1. ⟨hal-00496879⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Cyril Paranthoen, et al.. Lasers à boites quantiques sur InP, de très faibles courants de seuil et émettant à 1.55 µm. 25 ème Journées Nationales de l'Optique Guidées (JNOGs), Nov 2006, Metz, France. pp.1. ⟨hal-00491800⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Cyril Paranthoen, Olivier Dehaese, et al.. Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. LEOS 2006 (Lasers & Eloctro-Optics Society), Oct 2006, Montreal, Canada. pp.870-71, ⟨10.1109/LEOS.2006.279083⟩. ⟨hal-00491812⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Jacky Even, Cyril Paranthoen, et al.. Influence of the number of quantum dots stacks on the threshold current density of 1.55 µm InAs/InP(311)B semiconductor lasers. ESLW 2006 (European Semiconductor Laser Workshop), Sep 2006, Nice, France. pp.1. ⟨hal-00491806⟩
  • Gautier Moreau, Kamel Merghem, Anthony Martinez, Sophie Bouchoule, Abderrahim Ramdane, et al.. InAs/InP(311)B quantum dot single mode lasers emitting at 1.52 µm. ePIXnet annual meeting, Sep 2006, Lausanne, Switzerland. ⟨hal-00496916⟩
  • Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Cyril Paranthoen, et al.. Recent progress in QD broad area lasers. ePIXnet annual meeting, Sep 2006, Lausanne, Switzerland. ⟨hal-00491803⟩
  • Jean-Michel Lamy, Christophe Levallois, Abdulhadi Nakkar, Philippe Caroff, Cyril Paranthoen, et al.. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization. Trends in Nanotechnology 2006, Sep 2006, Grenoble, France. pp.1672-1676, ⟨10.1002/pssa.200675343⟩. ⟨hal-00488399⟩
  • François Doré, Jacky Even, Charles Cornet, Andrei Schliwa, Nicolas Bertru, et al.. A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate. 28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩. ⟨hal-00491466⟩
  • Estelle Homeyer, Rozenn Piron, Philippe Caroff, Cyril Paranthoen, Olivier Dehaese, et al.. Lasers à Boîtes Quantiques InAs/InP émettant à 1.55µm : effet de la température et du nombre de plans de boîtes. Journées des Nanosciences de Bretagne, Jun 2006, Rennes, France. pp.1. ⟨hal-00491797⟩
  • François Doré, Charles Cornet, Philippe Caroff, A. Ballestar, Jacky Even, et al.. InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence. 4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. pp.3920, ⟨10.1002/pssc.200671622⟩. ⟨hal-00491729⟩
  • Laurent Joulaud, Cyril Paranthoën, Estelle Homeyer, Rozenn Piron, Frederic Grillot, et al.. Performances of InAs/InP quantum dot and quantum dash lasers. International Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), 2006, Paris, France. ⟨hal-00485313⟩
  • Philippe Caroff, Estelle Homeyer, Cyril Paranthoën, Rozenn Piron, Frederic Grillot, et al.. Ultra-low threshold current density 1.55 µm InAs quantum dot lasers grown on InP. International Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), 2006, Paris, France. ⟨hal-00485693⟩
  • François Doré, Charles Cornet, Andrei Schliwa, A. Ballestar, Jacky Even, et al.. InAsSb/InGaAs quantum nanostructures on InP (100)substrate: observation of 2.35 μm photoluminescence. 32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.524, ⟨10.1002/pssc.200564132⟩. ⟨hal-00491737⟩
  • Estelle Homeyer, Rozenn Piron, Philippe Caroff, Cyril Paranthoen, Olivier Dehaese, et al.. Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm. 32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.407-10, ⟨10.1002/pssc.200564151⟩. ⟨hal-00491820⟩
  • Estelle Homeyer, Rozenn Piron, Philippe Caroff, Cyril Paranthoen, Olivier Dehaese, et al.. Study in temperature of a laser in a single layout of InAs quantum boxes on InP substrate emitting at 1,55 µm. 9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.193-194, ⟨10.1051/jp4:2006135053⟩. ⟨hal-00491825⟩
  • François Doré, A. Ballestar, Charles Cornet, Nicolas Bertru, Ibrahim Alghoraibi, et al.. Structures à îlots quantiques sur substrat InP(100)pour l'émission dans le moyen infrarouge (2−5 µm). 9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.283, ⟨10.1051/jp4:2006135090⟩. ⟨hal-00491724⟩
  • François Doré, Charles Cornet, Philippe Caroff, A. Ballestar, Jacky Even, et al.. First observation of wavelength greater than 2 microns photoluminescence of quantum dots on InP (100) substrate. "Mid Infrared Optoelectronics : Materials and Devices" conference, Lancaster, UK, September (2005)., Sep 2005, Lancaster, United Kingdom. pp.1. ⟨hal-00504462⟩
  • François Doré, Charles Cornet, A. Ballestar, Jacky Even, Olivier Dehaese, et al.. First observation of 2.4 microns photoluminescence of InAsSb/InP quantum dots on (100) InP substrate. Narrow Gap Semiconductors conference, Jul 2005, Toulouse, France. pp.1. ⟨hal-00504441⟩
  • Jacky Even, Charles Cornet, François Doré, Andrei Schliwa, A. Ballestar, et al.. InAsSb/InP quantum dots for midwave infrared emitters : a theoretical study. Mid Infrared Optoelectronics : Materials and Devices : MIOMD conference, 2005, Lancaster, United Kingdom. pp.1. ⟨hal-00504452⟩
  • R. Piron, F. Rene, Eric Latrille. Comparaison des modes opératoires à pression de filtration ou flux de perméat constants lors de la concentration par microfiltration tangentielle d'une suspension de levures.. Colloque Prosetia, Nov 1996, Rennes, France. ⟨hal-02766526⟩

Poster de conférence9 document

  • Lipin Chen, Rozenn Piron, Oliver Skibitzki, Yoan Léger, Christophe Levallois, et al.. Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizations. International Symposium : 20th Anniversary of LPQM, Apr 2019, Cachan, France. ⟨hal-02882424⟩
  • Lipin Chen, Oliver Skibitzki, Yoan Léger, Christophe Levallois, Rozenn Piron, et al.. Photoluminescence of 2D-vertical In-rich APBs embedded in InGaP/SiGe/Si. 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. 2018. ⟨hal-01909074v2⟩
  • Lipin Chen, Oliver Skibitzki, Yoan Léger, Christophe Levallois, Rozenn Piron, et al.. Excitons bounded around In-rich antiphase boundaries. 34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France. 2018. ⟨hal-01864401⟩
  • Lipin Chen, Oliver Skibitzki, Rozenn Piron, Julie Stervinou, Antoine Létoublon, et al.. Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties. European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018. ⟨hal-01864388⟩
  • Ronan Tremblay, Yong Huang, Jean-Philippe Gauthier, Rozenn Piron, Alexandre Beck, et al.. Electroluminescence de boites quantiques InGaAs/GaP et ingénérie de bande des couches d’injection laser AlGaP/GaP. Optique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France. ⟨hal-01497243⟩
  • Kamil Klaime, Dame Thiam, Rozenn Piron, Cyril Paranthoen, Thomas Batte, et al.. Single and Double Section InAs Quantum Dots Mode‐Locked Laser Elaborated on Misoriented (001) InP Substrate. International Symposium on Physics and Applications of Laser Dynamics 2013 (IS-PALD 2013), Oct 2013, Paris, France. ⟨hal-01165707⟩
  • Kamil Klaime, Rozenn Piron, Dame Thiam, Cyril Paranthoen, Olivier Dehaese, et al.. Lasers à blocage de modes bi-section à base de boites quantiques InAs sur InP (001) désorienté émettant à 1,64 µm à des taux de répétitions de 22,6 GHz. Optique Paris XIII - 33è Journées Nationales d'Optique Guidée (JNOG'33), Jul 2013, Villetaneuse, France. ⟨hal-01167850⟩
  • Kamil Klaime, Rozenn Piron, Dame Thiam, Cyril Paranthoen, Nicolas Chevalier, et al.. Lasers à blocage de modes mono-section à base de boites quantiques InAs sur InP émettant dans la bande L à un taux de répétition de 102 GHz. Journées Boîtes Quantiques 2013 (JBQ 2013), Jun 2013, Paris, France. ⟨hal-01165712⟩
  • Kamil Klaime, Cosimo Calo, Rozenn Piron, Cyril Paranthoen, Dame Thiam, et al.. InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. Compound Semiconductor Week 2013 - 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), May 2013, Kobe, Japan. IEEE (ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562595⟩. ⟨hal-01167841⟩

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